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IRFR120, IRFU120, SiHFR120, SiHFU120
www.vishay.com
PRODUCT SUMMARY
Power MOSFET
FEATURES
? Dynamic dV/dt Rating
Vishay Siliconix
V DS (V)
100
?
Repetitive Avalanche Rated
R DS(on) ( ? )
Q g (Max.) (nC)
V GS = 10 V
16
0.27
?
?
?
Surface Mount (IRFR120, SiHFR120)
Straight Lead (IRFU120, SiHFU120)
Available in Tape and Reel
Q gs (nC)
Q gd (nC)
Configuration
4.4
7.7
Single
?
?
?
Fast Switching
Ease of Paralleling
Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
D
DESCRIPTION
DPAK
(TO-252)
D
D
IPAK
(TO-251)
G
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
G
S
G
D S
S
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
ORDERING INFORMATION
N-Channel MOSFET
are possible in typical surface mount applications.
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
DPAK (TO-252)
SiHFR120-GE3
IRFR120PbF
SiHFR120-E3
DPAK (TO-252)
SiHFR120TR-GE3 a
IRFR120TRPbF a
SiHFR120T-E3 a
DPAK (TO-252)
SiHFR120TRR-GE3 a
IRFR120TRRPbF a
SiHFR120TR-E3 a
DPAK (TO-252)
SiHFR120TRL-GE3 a
IRFR120TRLPbF a
SiHFR120TL-E3 a
IPAK (TO-251)
SiHFU120-GE3
IRFU120PbF
SiHFU120-E3
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
100
± 20
UNIT
V
Continuous Drain Current
V GS at 10 V
T C = 25 °C
T C = 100 °C
I D
7.7
4.9
A
Pulsed Drain Current a
I DM
31
Linear Derating Factor
Linear Derating Factor (PCB
Mount) e
0.33
0.020
W/°C
Single Pulse Avalanche Energy b
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
E AS
I AR
E AR
210
7.7
4.2
mJ
A
mJ
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount) e
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d
T C = 25 °C
T A = 25 °C
for 10 s
P D
dV/dt
T J , T stg
42
2.5
5.5
- 55 to + 150
260
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V DD = 25 V, starting T J = 25 °C, L = 5.3 mH, R g = 25 ? , I AS = 7.7 A (see fig. 12).
c. I SD ? 9.2 A, dI/dt ? 110 A/μs, V DD ? V DS , T J ? 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S13-0171-Rev. C, 04-Feb-13
1
Document Number: 91266
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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